Program20

Tuesday, 20 May 2003

Interface/Surface Chemistry
9:30 PL03	N. Jacobson, E. Opila, D. Myers* and E. Copland**; NASA Glenn Research Center, USA Cleveland State University/NASA Glenn Research Center, USA East Central University, USA *Case Western Reserve University/NASA Glenn Research Center, USA Interaction of water vapor with oxides at elevated temperature
10:30 Coffee brake
10:45 KL06	R. Dziembaj; Jagiellonian University, Poland Peculiarities of transition metals dispersed on oxide support in relation to adsorption and catalysis phenomena
11:15 KL07	S. Shimada and T. Sato; Hokkaido University, Japan High temperature oxidation of SiC compositionally graded graphite coated with sol-gel derived HfO₂
11:45 OL03	Yu.F. Shmal’ko, Ye.V. Klochko and M.V. Lototsky; A.N.Podgorny Institute for Mechanical Engineering Problems of National Academy of Sciences of the Ukraine, Ukraine Effect of hydrogen thermo desorption activation by metal hydrides
12:15 Lunch break

Preparation of bulk materials
13:30 PL04	T. Izumi and Y. Shiohara; International Superconductivity Technology Center, Japan Crystal growth of superconductive oxide from oxide melts
14:30 KL08	Y. Ikuhara; The University of Tokyo, Japan Grain boundary character and atomic structures in oxide ceramics
15:00 Coffee break
15:15 KL09	R. Riedel; Darmstadt University of Technology, Germany Synthesis of novel high-temperature ceramic materials form molecular precursors
15:45 KL10	J. Hojo; Kyushu University, Japan Nanostructure design of ceramics from fine composite particles
16:15 KL11	J. Gole, Z. Dai, J. Stout and Z. Wang; Georgia Institute of Technology, USA Silicon/silica and tin oxide based nanowires, nanofiber arrays, nanoribbons, and nanotubes
16:45 OL04	T. Bak, T. Burg, J. Nowotny, M. Rekas, L. Sheppard, C.C. Sorrell, Y. Yoshida, K. Yamaguchi and M. Yamawaki; The University of New South Wales, Australia The University of Tokyo, Japan Semiconducting properties of TiO₂ single crystal vs. ceramic
17:15 adjourn